smd type ic mosfet smd type 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. source 2. drain 3. gate 1 2 3 1gate 2drain 3source 2SK2110 features low on-resistance r ds(on) =1.5 max.@v gs =4.0v,i d =0.3a high switching speed absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v i d 0.5 a i dp 1.0 a power dissipation * p d 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *16cm 2 x0.7mm,ceramic substrate used drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 1.0 a gate leakage current i gss v gs = 20v,v ds =0 10 na gate threshold voltage v gs(th) v ds =10v,i d =1ma 0.8 1.5 2.0 v forward transfer admittance y fs v ds =10v,i d =0.3a 0.4 s v gs =4.0v,i d =0.3a 0.95 1.5 v gs =10v,i d =0.3a 0.82 1.2 input capacitance c iss 100 pf output capacitance c oss 38 pf reverse transfer capacitance c rss 10 pf turn-on delay time t d(on) 2ns rise time tr 1.3 ns turn-off delay time t d(off) 38 ns fall time tf 13 ns v ds =10v,v gs =0,f=1mhz i d =0.3a,v gs(on) =10v,r l =83 ,r g =10 ,v dd =25v drain to source on-state resistance r ds(on) marking marking nt 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type smd type smd type product specification
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